AMP374P6453BT1-C1H/S
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs WITH SPD
Revision: 1.1
Revision Date: 11/2000
Document Number: 65830
Page Number: 5 of 12
AVED MEMORY PRODUCTS
Where Quality & Memory Merge
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) T A = 0 to 70ºC
Symbol
Test Condition
Version
-1H
Unit
ICC1*
Burst Length = 1
tRC
≥ tRC (min)
1,260
mA
IOL = 0mA
ICC2P
CKE
≤ VIL (max), tCC = 10ns
36
mA
ICC2PS
CKE & CLK
≤ VIL (max), tCC = ∞
36
ICC2N
CKE
≥ VIH (min), CS ≥ VIH (min), tCC = 10ns
Input signals are changed one time during 20ns
288
mA
ICC2NS
CKE
≥ VIH (min), CLK≤ VIL (max), tCC = ∞
Input signals are stable
252
ICC3P
CKE
≤ VIL (max), tCC = 10ns
108
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
108
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
540
mA
ICC3NS
CKE
≥ VIH(min), CLK≤ VIL(max), tCC = ∞
Input signals are stable
450
ICC4
IOL = 0mA
mA
Page Burst
1,305
4 Banks activated
tCCD = 2CLKS
ICC5
tRC
≥ tRC (min)
2,070
mA
ICC6
CKE
≤ 0.2V
90
mA
ICC1:
Operating Current (one bank active)
ICC2P:
Precharge Standby Current in power-down mode
ICC2PS:
Precharge Standby Current in power-down mode.
ICC2N:
Precharge Standby Current in non power-down mode.
ICC2NS:
Precharge Standby Current in non power-down mode.
ICC3P:
Active Standby Current in power-down mode.
ICC3PS:
Active Standby Current in power-down mode.
ICC3N:
Active Standby Current in non power-down mode (One Bank Active).
ICC3NS:
Active Standby Current in non power-down mode (One Bank Active).
ICC4:
Operating Current (Burst Mode)
ICC5
Refresh Current
ICC6:
Self Refresh Current
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
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