MT49H8M36 datasheet(1/49 Pages) MICRON

Part #	MT49H8M36

Description	288Mb CIO Reduced Latency

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	MICRON [Micron Technology]

Direct Link	http://www.micron.com

Logo

1 / 49 page

Products and specifications discussed herein are subject to change by Micron without notice.

288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II

Features

PDF: 09005aef80a41b46/Source: 09005aef809f284b

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT49H8M36_1.fm - Rev. H 8/05 EN

1

288Mb CIO Reduced Latency (RLDRAM® II)

MT49H8M36

MT49H16M18

MT49H32M9

For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram

Features

• 400 MHz DDR operation (800 Mb/s/pin data rate)

• Organization

8 Meg x 36, 16 Meg x 18, and 32 Meg x 9

8 banks

• Cyclic bank switching for maximum bandwidth

• Reduced cycle time (20ns at 400 MHz)

• Nonmultiplexed addresses (address multiplexing

option available)

• SRAM-type interface

• Programmable READ latency (RL), row cycle time,

and burst sequence length

• Balanced READ and WRITE latencies in order to

optimize data bus utilization

• Data mask for WRITE commands

• Differential input clocks (CK, CK#)

• Differential input data clocks (DKx, DKx#)

• On-chip DLL generates CK edge-aligned data and

output data clock signals

• Data valid signal (QVLD)

• 32ms refresh (8K refresh for each bank; 64K refresh

command must be issued in total each 32ms)

• 144-ball µBGA package

• HSTL I/O (1.5V or 1.8V nominal)

•25Ω–60Ω matched impedance outputs

• 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O

• On-die termination (ODT) RTT

Table 1:

Valid Part Numbers

Part Number

Description

MT49H8M36FM-xx

8 Meg x 36 RLDRAM II

MT49H16M18FM-xx

16 Meg x 18 RLDRAM II

MT49H32M9FM-xx

32 Meg x 9 RLDRAM II

Figure 1:

144-Ball µBGA

Notes: 1. Contact Micron for availability of lead-free

products.

Options

Marking

• Clock cycle timing

2.5ns (400 MHz)

3.3ns (300 MHz)

5ns (200 MHz)

-25

-33

-5

• Configuration

8 Meg x 36

16 Meg x 18

32 Meg x 9

MT49H8M36

MT49H16M18

MT49H32M9

• Operating temperature range

Commercial

0° to +95°C

Industrial

TC = -40°C to +95°C

TA = -40°C to 85°C)

None

IT

•Package

144-ball µBGA

(11mm x 18.5mm, lead-free)

FM

BM1

Similar Part No. - MT49H8M36

Manufacturer	Part #	Datasheet	Description
Micron Technology	MT49H8M36	2Mb / 76P	288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II

More results

Similar Description - MT49H8M36

Manufacturer	Part #	Datasheet	Description
Micron Technology	MT49H16M18C	1Mb / 44P	288Mb SIO REDUCED LATENCY(RLDRAM II)
Micron Technology	MT49H8M32	652Kb / 43P	REDUCED LATENCY DRAM RLDRAM
GSI Technology	GS4288C09	2Mb / 62P	32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II
GSI Technology	GS4576C36GL-25I	2Mb / 63P	576Mb CIO Low Latency DRAM (LLDRAM II)
Infineon Technologies A...	HYB18RL25632AC	941Kb / 37P	256 Mbit DDR Reduced Latency DRAM V1.60 July 2003
Micron Technology	MT49H32M9	2Mb / 76P	288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
GSI Technology	GS4576C09	2Mb / 62P	64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)
GSI Technology	GS82582D38GE-400	453Kb / 27P	288Mb SigmaQuad-II 288Mb SigmaQuad-II
Zilog, Inc.	Z8036	3Mb / 79P	Z-CIO AND CIO COUNTER / TIMER AND PARALLRL I/O UNIT
Samsung semiconductor	K4C89183AF	1Mb / 55P	288Mb x18 Network-DRAM2 Specification

More results

MT49H8M36 Datasheet(PDF) 1 Page - Micron Technology

MT49H8M36 Datasheet(HTML) 1 Page - Micron Technology

Similar Part No. - MT49H8M36

Similar Description - MT49H8M36

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL