GM72V66841ELT-7K datasheet(4/10 Pages) HYNIX

Part #	GM72V66841ELT-7K

Description	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

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Manufacturer	HYNIX [Hynix Semiconductor]

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4 / 10 page

GM72V66841ET/ELT

Rev. 1.1/Apr.01

DC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ= 0 V)

Parameter

Symbol

Unit Test conditions

Notes

Operating

current

Standby current in

power down

ICC2P

Self refresh current

ICC6

mA

VIH >=VCC - 0.2

VIL <=0.2V

7

Burst length= 1

tRC = min

1, 2, 3

CKE = V IL,

tCK = 12 ns

5

ICC1

mA

Standby current in

power down

(input signal stable)

ICC2PS

CKE=VIL,

tCK= infinity

6

mA

Standby current in

non power down

(CAS Latency=2)

ICC2N

CKE,CS = VIH,

tCK = 12ns

4

mA

Standby current in

non power down

(input signal stable)

ICC2NS

CKE = V IH,

tCK = infinity

4

mA

Active standby current

in power down

ICC3P

CKE = V IL,

tCK = 12 ns,

DQ = High-Z

1,2,5

mA

Active standby current

in power down

(input signal stable)

ICC3PS

CKE = V IL,

tCK = infinity

2,6

mA

Active standby current

in non power down

ICC3N

CKE,CS = VIH,

tCK = 12 ns,

DQ = High-Z

1,2,4

mA

Active standby current

in non power down

(input signal stable)

ICC3NS

CKE = V IH,

tCK = infinity

2,9

mA

Burst

operating

current

ICC4

tCK = min

BL = 4

1,2,3

mA

( CL= 2 )

ICC4

mA

( CL= 3 )

Refresh current

tRC = min

3

ICC5

mA

7,8

6,8

- 8

Max

80

150

Max

-7J

80

120

- 75

Max

85

150

Max

-7K

80

120

- 7

Max

1

85

2

15

12

6

5

20

120

150

160

0.4

30

-4-

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GM72V66841ELT-7K Datasheet(PDF) 4 Page - Hynix Semiconductor

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