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H27UCG8T2BTR-BC Datasheet(PDF) 19 Page - Hynix Semiconductor

Part No. H27UCG8T2BTR-BC
Description  64Gb(8192M x 8bit) MLC NAND Flash
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Maker  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/ko/index.jsp
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H27UCG8T2BTR-BC
64Gb(8192M x 8bit) MLC NAND Flash
Rev 0.1 / Oct. 2012
19
Parameter
Symbol
3.3V
Unit
Min
Max
CLE setup time
tCLS
6
ns
CLE Hold time
tCLH
3
ns
CE# setup time
tCS
20
ns
CE# hold time
tCH
5
ns
WE# pulse width
tWP
8
ns
ALE setup time
tALS
6
ns
ALE hold time
tALH
3
ns
Data setup time
tDS
6
ns
Data hold time
tDH
2
ns
Write cycle time
tWC
16
ns
WE# high hold time
tWH
6
ns
Data transfer from cell to register
tR
90
us
ALE to RE# delay
tAR
10
ns
CLE to RE# delay
tCLR
10
ns
Ready to RE# low
tRR
20
ns
RE# pulse width
tRP
8
ns
WE# high to busy
tWB
100
ns
Read cycle time
tRC
16
ns
RE# access time
tREA
16
ns
RE# high to output high Z
tRHZ
100
ns
CE# high to output high Z
tCHZ
50
ns
RE# high to output hold
tRHOH
15
ns
RE# low to output hold
tRLOH
5
ns
RE# or CE# high to output hold
tCOH
15
ns
RE# high hold time
tREH
6
ns
WE# high to RE# low
tWHR
80
ns
WE# high to RE# low for Random data out
tWHR2
200
ns
RE# high to WE# low
tRHW
100
ns
Output high Z to RE# low
tIR
0
ns
CE# low to RE# low
tCR
10
ns
Address to data loading time
tADL
200
ns
Device resetting time (Read/Program/Erase)
tRST
20/30/500
us
Write protection time
tWW
100
ns
2.7. AC Timing Characteristics




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