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H27UCG8T2BTR-BC Datasheet(PDF) 39 Page - Hynix Semiconductor

Part No. H27UCG8T2BTR-BC
Description  64Gb(8192M x 8bit) MLC NAND Flash
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Maker  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/ko/index.jsp

 39 page
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64Gb(8192M x 8bit) MLC NAND Flash
Rev 0.1 / Oct. 2012
4.2. Cache Read (available only within a block)
To improve page read throughput, cache read operation is used within a block. First step is same as normal page
read, issuing a page read sequence (00-30h). After random access (R/B# returns to high), 31h command is
latched into the command register. Data is being transferred from the data register to the cache register. While
cache register data is outputted, next page is transferred from memory cell to data register. R/B# will stay low
during present page random accessing and previous page transferring to cache register. Because it is not
necessary to output a whole page data before issuing another 31h command, if serial data output time exceeds
random access time (tR), the random access time can be hidden. The subsequent pages are issued additional
31h commands. To terminate cache read, 3Fh command should be issued. This command transfer data from
data register to the cache register without issuing next page read. During the Cache Read Operation, device
doesn‟t allow any other command except Cache Read command (31h), Read Status (70h, 78h, 75h), Read (00h),
and Reset (FFh). To carry out other operations after cache operation, cache read must be ended by 3Fh
command or issue reset (FFh) before next operation.
Figure 34 : Cache read
4.3. Cache Read Enhanced (available only within a block)
This command extends the Cache Read command. While, by issuing a Cache Read command, the next page
address of the next page is automatically incremented by 1, the next page address of the next page is given
arbitrarily by the user. The Cache Read Enhanced command sequence consists of a 00h command, five address
cycles and a 31h command, which replaces the single 31h command of the Cache Read command sequence.

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