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IMX290LQR Datasheet(PDF) 1 Page - Sony Corporation
SONY [Sony Corporation]
Sony has developed the approx. 2.13M effective pixel back-
IMX291LQR with improved sensitivity in the visible-light and
near infrared light regions for industrial applications.
A new 2.9 Î¼m-square unit pixel has been developed that
combines a back-illuminated structure with technology for
improving near infrared sensitivity to further enhance picture
quality at low illumination while at the same time realizing Full
HD cameras for industrial applications. This realizes two or
Diagonal 6.46 mm (Type 1/2.8) Square Pixel Array
Color CMOS Image Sensor
Back-Illuminated CMOS image Sensors with Improved Visible Light and Near Infrared Sensitivity
that Support 1080p
Back-Illuminated Structure + Improved Sensitivity in the Near Infrared Light Region
more times the sensitivity in the visible-light region and three or
more times the sensitivity in the near infrared light region than
that of the existing Sony product (IMX236LQJ)*
. In addition,
two types of WDR (Wide Dynamic Range) technology are also
provided to further improve imaging performance.
The new lineup includes the two types of the IMX290LQR,
which has the DOL (Digital Overlap) -WDR function and the
IMX291LQR, which does not have the DOL-WDR function.
*1 See the New Product Information released in September 2013.
Good sensitivity characteristics at low illumination and in the
near infrared light region are a required performance of cameras
for industrial applications. These new image sensors use a
back-illuminated structure and also have an expanded photodi-
ode area, which simultaneously improve sensitivity in both light
regions compared to the existing front-illuminated structure.
In addition, the new image sensors realize improved sensitivity
characteristics two or more times in the visible-light region and
three or more times in the near infrared light region (850 nm)
compared to the existing Sony product (IMX236LQJ) with the
same pixel size and increased sensitivity in the near infrared
light region (Photograph 2).
The IMX290LQR supports both multiple exposure and DOL-
type WDR functions. (The IMX291LQR supports only the
multiple exposure-type WDR function.)
The multiple exposure-type WDR function outputs one set of
two or four frames with different exposure times. In this case,
the gain can also be set separately for each frame in addition
to the exposure time.
The DOL-type WDR function outputs the data for up to three
frames with different storage times line by line. By performing
special signal processing with an ISP (Image Signal Proces-
sor) or other device at the image sensor rear-end, this enables
improvement of picture quality under low illumination
compared to the multiple exposure-type WDR function.
The IMX290LQR and IMX291LQR are equipped with three
different types of output interface (low-voltage LVDS serial,
MIPI CSI-2, CMOS parallel) to meet diverse needs. The
low-voltage LVDS serial interface has a maximum output data
rate of 445.5 Mbps/ch and the number of output channels
can be selected from 2ch, 4ch or 8ch. The MIPI CSI-2
interface has a maximum output data rate of 891 Mbps/lane
and the number of output channels can be selected from 2
lanes or 4 lanes. The CMOS parallel interface has a
maximum output data rate of 74.25 Mpixels/s.
Back-illuminated structure with 2.9 Î¼m-square unit pixel
High sensitivity characteristics (two or more times that
of the existing product)
Improved sensitivity in the near infrared light region
(three or more times that of the existing product)
Supports WDR (multiple exposure WDR, DOL-WDR)
Versatile interface (CMOS parallel, low-voltage LVDS
serial, MIPI CSI-2)
* Exmor R is a trademark of Sony Corporation. The Exmor R is a Sony's CMOS image sensor with
significantly enhanced imaging characteristics including sensitivity and low noise by changing
fundamental structure of ExmorTM pixel adopted column parallel A/D converter to
*STARVIS is a trademark of Sony Corporation. The STARVIS is back-illuminated pixel technology
used in CMOS image sensors for surveillance camera applications. It features a sensitivity of
2000 mV or more per 1 Î¼m
(color product, when imaging with a 706 cd/m2 light source, F5.6 in
1 s accumulation equivalent), and realizes high picture quality in the visible-light and near
infrared light regions.
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