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SEMIX151GAL12E4S Datasheet(PDF) 2 Page - Semikron International |
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SEMIX151GAL12E4S Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX151GAL12E4s 2 Rev. 3 – 03.07.2013 © by SEMIKRON td(on) VCC = 600 V IC =150 A VGE =±15 V RG on =1 RG off =1 di/dton = 3900 A/µs di/dtoff =2000 A/µs Tj =150 °C 204 ns tr Tj =150 °C 42 ns Eon Tj =150 °C 16.6 mJ td(off) Tj =150 °C 468 ns tf Tj =150 °C 91 ns Eoff Tj =150 °C 18.4 mJ Rth(j-c) per IGBT 0.19 K/W Inverse diode VF = VEC IF = 150 A VGE =0 V chiplevel Tj =25 °C 2.1 2.46 V Tj =150 °C 2.1 2.4 V VF0 chiplevel Tj =25 °C 1.1 1.3 1.5 V Tj =150 °C 0.7 0.9 1.1 V rF chiplevel Tj =25 °C 4.3 5.6 6.4 m Tj =150 °C 6.7 7.8 8.5 m IRRM IF = 150 A di/dtoff =3400 A/µs VGE =-15 V VCC = 600 V Tj =150 °C 115 A Qrr Tj =150 °C 23 µC Err Tj =150 °C 8.9 mJ Rth(j-c) per diode 0.31 K/W Freewheeling diode VF = VEC IF = 150 A VGE =0 V chiplevel Tj =25 °C 2.1 2.46 V Tj =150 °C 2.1 2.4 V VF0 chiplevel Tj =25 °C 1.1 1.3 1.5 V Tj =150 °C 0.7 0.9 1.1 V rF chiplevel Tj =25 °C 4.3 5.6 6.4 m Tj =150 °C 6.7 7.8 8.5 m IRRM IF = 150 A di/dtoff =3400 A/µs VGE =-15 V VCC = 600 V Tj =150 °C 115 A Qrr Tj =150 °C 23 µC Err Tj =150 °C 8.9 mJ Rth(j-c) per diode 0.31 K/W Module LCE 16 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 m TC =125 °C 1m Rth(c-s) per module 0.075 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 145 g Temperature Sensor R100 Tc=100°C (R25=5 k) 493 ± 5% B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Characteristics Symbol Conditions min. typ. max. Unit SEMiX® 1s GAL Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* •AC inverter drives •UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C |
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Similar Description - SEMIX151GAL12E4S_13 |
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