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SEMIX101GD126HDS_13 Datasheet(PDF) 1 Page - Semikron International

Part No. SEMIX101GD126HDS_13
Description  Trench IGBT Modules
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Maker  SEMIKRON [Semikron International]
Homepage  http://www.semikron.com
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SEMiX101GD126HDs
© by SEMIKRON
Rev. 1 – 03.07.2013
1
SEMiX® 13
GD
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
•Not for new design
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
Tj =25°C
1200
V
IC
Tj = 150 °C
Tc =25 °C
129
A
Tc =80 °C
91
A
ICnom
75
A
ICRM
ICRM = 2xICnom
150
A
VGES
-20 ... 20
V
tpsc
VCC = 600 V
VGE
≤ 20 V
VCES
≤ 1200 V
Tj =125 °C
10
µs
Tj
-40 ... 150
°C
Inverse diode
IF
Tj = 150 °C
Tc =25 °C
117
A
Tc =80 °C
81
A
IFnom
75
A
IFRM
IFRM = 2xIFnom
150
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
600
A
Tj
-40 ... 150
°C
Module
It(RMS)
Tterminal =80 °C
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =75A
VGE =15 V
chiplevel
Tj =25 °C
1.7
2.10
V
Tj =125 °C
2.0
2.45
V
VCE0
chiplevel
Tj =25 °C
11.2
V
Tj =125 °C
0.9
1.1
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
9.3
12.0
m
Tj =125 °C
14.7
18.0
m
VGE(th)
VGE=VCE, IC =3 mA
5
5.8
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
1mA
Tj =125 °C
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
5.3
nF
Coes
f=1MHz
0.28
nF
Cres
f=1MHz
0.24
nF
QG
VGE = - 8 V...+ 15 V
600
nC
RGint
Tj =25°C
10.00
td(on)
VCC = 600 V
IC =75A
VGE =±15 V
RG on =2 
RG off =2 
Tj =125 °C
225
ns
tr
Tj =125 °C
40
ns
Eon
Tj =125 °C
10
mJ
td(off)
Tj =125 °C
470
ns
tf
Tj =125 °C
85
ns
Eoff
Tj =125 °C
11
mJ
Rth(j-c)
per IGBT
0.27
K/W




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