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SEMIX101GD12E4S_13 Datasheet(PDF) 1 Page - Semikron International

Part No. SEMIX101GD12E4S_13
Description  Trench IGBT Modules
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Maker  SEMIKRON [Semikron International]
Homepage  http://www.semikron.com
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SEMiX101GD12E4s
© by SEMIKRON
Rev. 1 – 03.07.2013
1
SEMiX® 13
GD
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
Tj =25°C
1200
V
IC
Tj = 175 °C
Tc =25 °C
160
A
Tc =80 °C
123
A
ICnom
100
A
ICRM
ICRM = 3xICnom
300
A
VGES
-20 ... 20
V
tpsc
VCC = 800 V
VGE
≤ 20 V
VCES
≤ 1200 V
Tj =150 °C
10
µs
Tj
-40 ... 175
°C
Inverse diode
IF
Tj = 175 °C
Tc =25 °C
121
A
Tc =80 °C
91
A
IFnom
100
A
IFRM
IFRM = 3xIFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
550
A
Tj
-40 ... 175
°C
Module
It(RMS)
Tterminal =80 °C
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =100 A
VGE =15 V
chiplevel
Tj =25 °C
1.8
2.05
V
Tj =150 °C
2.2
2.4
V
VCE0
chiplevel
Tj =25 °C
0.8
0.9
V
Tj =150 °C
0.7
0.8
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
10.0
11.5
m
Tj =150 °C
15.0
16.0
m
VGE(th)
VGE=VCE, IC = 3.8 mA
5
5.8
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
1mA
Tj =150 °C
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
6.2
nF
Coes
f=1MHz
0.41
nF
Cres
f=1MHz
0.34
nF
QG
VGE = - 8 V...+ 15 V
565
nC
RGint
Tj =25°C
7.50
td(on)
VCC = 600 V
IC =100 A
VGE =±15 V
RG on =1 
RG off =1 
di/dton = 3100 A/µs
di/dtoff =1200 A/µs
Tj =150 °C
187
ns
tr
Tj =150 °C
35
ns
Eon
Tj =150 °C
10.8
mJ
td(off)
Tj =150 °C
467
ns
tf
Tj =150 °C
94
ns
Eoff
Tj =150 °C
13.3
mJ
Rth(j-c)
per IGBT
0.27
K/W




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