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SEMIX101GD12E4S_13 Datasheet(PDF) 2 Page - Semikron International

Part No. SEMIX101GD12E4S_13
Description  Trench IGBT Modules
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Maker  SEMIKRON [Semikron International]
Homepage  http://www.semikron.com
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 2 page
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SEMiX101GD12E4s
2
Rev. 1 – 03.07.2013
© by SEMIKRON
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Inverse diode
VF = VEC
IF = 100 A
VGE =0 V
chiplevel
Tj =25 °C
2.2
2.52
V
Tj =150 °C
2.1
2.5
V
VF0
chiplevel
Tj =25 °C
1.1
1.3
1.5
V
Tj =150 °C
0.7
0.9
1.1
V
rF
chiplevel
Tj =25 °C
8.0
9.0
10.2
m
Tj =150 °C
10.5
12.5
13.7
m
IRRM
IF = 100 A
di/dtoff =3000 A/µs
VGE =-15 V
VCC = 600 V
Tj =150 °C
95
A
Qrr
Tj =150 °C
16
µC
Err
Tj =150 °C
6.5
mJ
Rth(j-c)
per diode
0.48
K/W
Module
LCE
20
nH
RCC'+EE'
res., terminal-chip
TC =25°C
0.7
m
TC =125 °C
1m
Rth(c-s)
per module
0.04
K/W
Ms
to heat sink (M5)
3
5
Nm
Mt
to terminals (M6)
2.5
5
Nm
Nm
w
350
g
Temperature Sensor
R100
Tc=100°C (R25=5 k)
493 ± 5%
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
3550
±2%
K
SEMiX® 13
GD
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C




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