SUU50N03-10P datasheet(2/4 Pages) VISHAY

Part #	SUU50N03-10P

Description	N-Channel 30-V 175C MOSFET PWM Optimized

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Manufacturer	VISHAY [Vishay Siliconix]

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SUU50N03-10P

Vishay Siliconix

www.vishay.com

2

Document Number: 71296

S-01706—Rev. A, 14-Aug-00

MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS =0 V, ID = 250 mA

30

V

Gate Threshold Voltage

VGS(th)

VDS =VGS,IDS = 250 mA

1

2

V

Gate-Body Leakage

IGSS

VDS =0 V, VGS =

20 V

100

nA

VDS =30 V, VGS =0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS =30 V, VGS =0 V, TJ = 125_C

50

mΑ

g

DSS

VDS =30 V, VGS =0 V, TJ = 175_C

150

m

On-State Drain Currenta

ID(on)

VDS =5 V, VGS =10 V

50

A

VGS =10 V,ID =15 A

0.0075

0.010

Drain Source On State Resistancea

rDS( )

VGS =10 V,ID =15 A, TJ = 125_C

0.016

Ω

Drain-Source On-State Resistancea

rDS(on)

VGS =10 V,ID =15 A, TJ = 175_C

0.019

Ω

VGS =4.5 V, ID =15 A

0.011

0.014

Forward Transconductancea

gfs

VDS =15 V,ID =15 A

20

S

Dynamicb

Input Capacitance

Ciss

2710

6000

Output Capacitance

Coss

VGS =0 V, VDS = 25V,f= 1MHz

500

pF

Reversen Transfer Capacitance

Crss

250

Total Gate Chargec

Qg

55

100

Gate-Source Chargec

Qgs

VDS =15 V, VGS =10 V,ID =20 A

10

nC

Gate-Drain Chargec

Qgd

DS

, GS

, D

9

Turn-On Delay Timec

td(on)

16

30

Rise Timec

tr

VDD =15 V,RL =0.3 Ω

90

135

ns

Turn-Off Delay Timec

td(off)

VDD

15 V, RL

0.3

Ω

ID

≃ 20 A, VGEN =10 V,Rg =2.5 Ω

33

60

ns

Fall Timec

tf

g

20

40

Source-Drain Diode Ratings and Characteristics (TC =25_C)b

Continuous Current

IS

20

A

Pulsed Current

ISM

100

A

Forward Voltagea

VSD

IF = 100 A, VGS =0 V

1.2

1.5

V

Reverse Recovery Time

trr

IF = 20 A, di/dt = 100 A/ms

55

100

ns

Notes:

a.

Pulse test; pulse width

≤ 300 ms, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

c.

Independent of operating temperature.

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