µPD16818

3

Data Sheet S11365EJ2V1DS

ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

INC pin low

1.0

µA

Note 1

0.4

1.0

mA

High-level input current

1.0

µA

0

2.0

Low-level input current

–0.09

mA

0

–0.12

PS pin high-level input current

0.09

mA

0

0.12

PS pin low-level input voltage

–1.0

µA

0

–2.0

Input pull-up resistance

°C

355065

k

Ω

0

75

PS pin input pull-down resistance

°C

355065

k

Ω

0

75

Control pin high-level input voltage

2.0

V

Control pin low-level input voltage

–0.3

0.8

V

1.2

2.4

Ω

Excitation direction <1>, <3>

±15

%

±5

Vx voltage in power-saving

1.0

1.2

1.4

V

Ω

Vx relative accuracy in power-

Excitation direction <1>, <3>

±5%

saving mode

Excitation direction <2>, <4>

±5

Charge pump circuit turn ON time

0.3

2.0

ms

H bridge turn ON time

2.0

µs

H bridge turn OFF time

Ω

5.0

µs

2. Sum of ON resistances of top and bottom MOS FETs

3. For the excitation direction, refer to FUNCTION TABLE.

4. Vx is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in FUNCTION TABLE.