HY57V281620ELT datasheet(7/13 Pages) HYNIX

Part #	HY57V281620ELT

Description	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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7 / 13 page

Rev. 1.1 / Jan. 2005

7

Synchronous DRAM Memory 128Mbit (8Mx16bit)

HY57V281620E(L)T(P) Series

ABSOLUTE MAXIMUM RATING

DC OPERATING CONDITION (TA= 0 to 70oC)

Note: 1. All voltages are referenced to VSS = 0V

2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration

AC OPERATING TEST CONDITION (TA= 0 to 70 oC, VDD=3.3±0.3V, VSS=0V)

Note 1.

Parameter

Symbol

Rating

Unit

Ambient Temperature

TA

0 ~ 70

oC

Storage Temperature

TSTG

-55 ~ 125

oC

Voltage on Any Pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Short Circuit Output Current

IOS

50

mA

Power Dissipation

PD

1

W

Soldering Temperature / Time

TSOLDER

260 / 10

oC / Sec

Parameter

Symbol

Min.

Typ

Max

Unit

Note

Power Supply Voltage

VDD, VDDQ

3.0

3.3

3.6

V

1

Input High Voltage

VIH

2.0

3.0

VDDQ + 0.3

V

1, 2

Input Low Voltage

VIL

-0.3

-

0.8

V

1, 3

Parameter

Symbol

Value

Unit

Note

AC Input High / Low Level Voltage

VIH / VIL

2.4 / 0.4

V

Input Timing Measurement Reference Level Voltage

Vtrip

1.4

V

Input Rise / Fall Time

tR / tF

1ns

Output Timing Measurement Reference Level Voltage

Voutref

1.4

V

Output Load Capacitance for Access Time Measurement

CL

50

pF

1

Z0 = 50

Output

Vtt = 1.4V

50pF

RT = 50

Vtt = 1.4V

50pF

DC Output Load Circuit

AC Output Load Circuit

RT = 500 Ω

Ω

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