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LM5110-3M Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM5110-3M Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 13 page Electrical Characteristics (Continued) T J = −40˚C to +125˚C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units SWITCHING CHARACTERISTICS td1 Propagation Delay Time Low to High, IN rising (IN to OUT) C LOAD = 2 nF, see Figure 1 25 40 ns td2 Propagation Delay Time High to Low, IN falling (IN to OUT) C LOAD = 2 nF, see Figure 1 25 40 ns t r Rise Time C LOAD = 2.0 nF, see Figure 1 14 25 ns t f Fall Time C LOAD = 2 nF, see Figure 1 12 25 ns LATCHUP PROTECTION AEC - Q100, Method 004 T J = 150˚C 500 mA Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics. Timing Waveforms 20079205 (a) 20079206 (b) FIGURE 1. (a) Inverting, (b) Non-Inverting www.national.com 6 |
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