©2004 Fairchild Semiconductor Corporation

May 2004

RMBA19500A Rev. C

RMBA19500A

PCS1900 2 Watt GaAs MMIC Power Amplifier

General Description

The RMBA19500A is a highly linear Power Amplifier. The

two stage circuit uses our pHEMT process. It has been

designed for use as a driver stage for PCS1900 base

stations, or as the output stage for Micro- and Pico-Cell

base stations. The amplifier has been optimized for high

linearity requirements for PCS operation.

Features

•2 Watt linear output power at 36 dBc ACPR1 for CDMA

operation

• OIP3

≥ 43 dBm at 27 and 30 dBm output

• Small Signal Gain of > 30 dB

• Small outline SMD package

Absolute Ratings

Notes:

1. Only under quienscent conditions—no RF applied.

3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23 MHz channel

at band center to the average power within a 30 KHz bandwidth at an 885 KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-center with adjusted supply and bias

conditions of Vdd = 6.5V and IdqTotal = 625mA (see Note 5).

5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with

nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 (or IDQTOTAL) can be adjusted

to optimize the linearity of the amplifier for other modulation systems.

The device requires external input and output matching to 50

Ω as shown in Figure 3 and the Parts List.

Symbol

Parameter

Ratings

Units

Vd

+10

V

Vg

Gate Supply Voltage (max absolute)

-5

V

RF Input Power (from 50

Ω source)

+5

dBm

Operating Case Temperature Range

-30 to +85

°C

Storage Temperature Range

-40 to +100

°C

Parameter

Min

Typ

Max

Units

Frequency Range

1930

1990

MHz

Gain (Small Signal) Over 1930–1990 MHz

30

dB

Gain Variation

Over Frequency Range

Over Temperature Range

±1.0

±1.5

dB

dB

Noise Figure

6

dB

P1dB Output

30

dBm

33

dBm

PAE @ 33 dBm Pout

24

%

43

45

dBm

Drain Voltage (Vdd)

7.0

V

-2

-0.25

V

180, 445

mA

11

°C/W