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SKW30N60HS Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SKW30N60HS Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 14 page SKW30N60HS ^ Power Semiconductors 3 Rev. 2 Aug-02 Dynamic Characteristic Input capacitance C iss - 1500 Output capacitance C os s - 203 Reverse transfer capacitance C rs s VCE =25V, VGE =0V, f =1MHz -92 pF Gate charge Q Gat e VCC =480V, I C =30A VGE =15V - 141 nC Internal emitter inductance measured 5mm (0.197 in.) from case L E TO-247AC - 13 nH Short circuit collector current 1) I C( SC ) VGE =15V,t SC≤ 10 µs VCC ≤ 600V, T j ≤ 15 0° C - 220 A Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d( o n) -20 Rise time t r -21 Turn-off delay time t d( of f) - 250 Fall time t f -25 ns Turn-on energy Eon -0.60 Turn-off energy Eoff -0.55 Total switching energy Ets T j =2 5 °C, VCC =400V, IC =30A, VGE =0/15V, R G =11 Ω L σ 2) =60nH, C σ 2) =40pF Energy losses include “tail” and diode reverse recovery. -1.15 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr t S t F - - - 125 20 105 ns Diode reverse recovery charge Q rr -0.82 µC Diode peak reverse recovery current I rr m -17 A Diode peak rate of fall of reverse recovery current during tb dirr /d t T j =2 5 °C, VR =400 V, IF =30A, diF/dt =1100A/ µs - 580 A/ µs 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E. |
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