SKW30N60HS datasheet(11/14 Pages) INFINEON

Part #	SKW30N60HS

Description	HIGH SPEED IGBT IN NPT-TECHNOLOGY

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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SKW30N60HS

^

Power Semiconductors

11

Rev. 2 Aug-02

0,0V

0,5V

1,0V

1,5V

2,0V

0A

10A

20A

30A

40A

50A

150°C

25°C

T

J=-55°C

-50

0

50

100

150

0,0

0,5

1,0

1,5

2,0

I

F=15A

I

F=30A

I

F=60A

VF, FORWARD VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

a function of forward voltage

Figure 26. Typical diode forward voltage as a

function of junction temperature

1µs

10µs

100µs

1m s

10m s 100m s

10

-3K/W

10

-2K/W

10

-1K/W

10

0K/W

single pulse

0.01

0.02

0.05

0.2

0.1

D

=0.5

tP, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

C 1 =

τ1/R1

R 1

R 2

C 2 =

τ2/R2

R

,( K / W )

τ , (s ) =

0.358

9.02*10

-2

0.367

9.42*10

-3

0.329

9.93*10

-4

0.216

1.19*10

-4

0.024

1.92*10

-5

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SKW30N60HS Datasheet(PDF) 11 Page - Infineon Technologies AG

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