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UTRON
UT51C164
Rev 1.4
256K X 16 BIT EDO DRAM
UTRON TECHNOLOGY INC.
P90005
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
DC CHARACTERISTICS (TA = 0℃ to 70ºC, VDD = 5.0 V ± 0.5 V, Vss = 0 V)
UT51C164
SYMBOL PARAMETER
SPEED
(tRAC)
Min
Max
UNIT TEST CONDITION
-35
-
190
-40
-
180
-50
-
170
IDD1
Operating Current,
VDD Supply
-60
-
160
mA
tRC = tRC (min.)
IDD2
Standby Current
(TTL Input)
-
-
3
mA
RAS = UCAS = LCAS
=VIH
-35
-
190
-40
-
180
-50
-
170
IDD3
RAS Only
Refresh
Current
-60
-
160
mA
tRC = tRC (min.)
-35
-
220
-40
-
200
-50
-
190
IDD4
EDO
Page
Mode
Current
-60
-
180
mA
tPC = tPC (min.)
-35
-
190
-40
-
180
-50
-
170
IDD5
CBR Refresh Current
-60
-
160
mA
tRC = tRC (min.)
IDD6
Standby Current
(CMOS Input)
-
-
2
mA
RAS ≧ VDD-0.2V
CAS ≧ VDD-0.2V
All other inputs≧ VSS
VDD
Power Supply
-
4.5
5.5
V
ILI
Input Leakage Current
-
-10
10
uA
VSS≦ VIN ≦VDD
ILO
Output
Leakage
Current
-
-10
10
uA
VSS≦ VOUT ≦VDD
RAS = CAS = VIH
VIL
Input Low Voltage
-
-1
0.8
V
VIH
Input High Voltage
-
2.4
VDD +1
V
VOL
Output Low Voltage
-
-
0.4
V
IOI = 2mA
VOH
Output High Voltage
-
2.4
-
V
IOH = 2mA
Notes: IDD1, IDD3, IDD4, IDD5 are dependent on output loading and cycle rates. Specified values are obtained with the output
open. IDD is specified as an average current. In IDD1, IDD3, and IDD5 address can be changed maximum once while
RAS =VIL. In IDD4, address can be changed maximum once within one EDO page cycle time, tPC.