MW6S010MR1 datasheet(8/16 Pages) FREESCALE

Part #	MW6S010MR1

Description	RF Power Field Effect Transistor

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

3.1 + j1.9

2.7 + j2.2

2.8 + j1.7

10.1 + j2.3

8.3 + j2.5

8.2 + j3.3

VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP

860

880

900

3.1 + j3.4

2.9 + j3.7

3.3 + j3.8

9.8 + j4.8

10.6 + j5.6

9.5 + j5.5

920

940

960

2.8 + j4.4

3.2 + j4.9

3.0 + j4.7

10.1 + j5.9

11.0 + j6.4

11.8 + j6.6

980

3.6 + j5.2

12.1 + j7.1

Figure 13. Series Equivalent Source and Load Impedance — 900 MHz

Zsource = Test circuit impedance as measured from

gate to ground.

Zload

= Test circuit impedance as measured

from drain to ground.

Z source

Z load

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

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MW6S010MR1 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc

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