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IC41LV1665-30K Datasheet(PDF) 5 Page - Integrated Circuit Solution Inc |
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IC41LV1665-30K Datasheet(HTML) 5 Page - Integrated Circuit Solution Inc |
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5 / 19 page  IC41C1665 IC41LV1665 Integrated Circuit Solution Inc. 5 DR031-0A 10/17/2001 FUNCTIONAL DESCRIPTION The IC41C1665 and the IC41LV1665 are CMOS DRAMs optimized for high-speed bandwidth, low-power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered nine bits (A0-A7) at a time. The row address is latched by the Row Address Strobe ( RAS). The column address is latched by the Column Address Strobe ( CAS). RAS is used to latch the first eight bits and CAS is used to latch the latter eight bits. The IC41C1665 and the IC41LV1665 have two CAS controls, LCAS and UCAS. The LCAS and UCAS inputs internally generate a CAS signal functioning in an identical manner to the single CAS input on the other 64K x 16 DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 - I/O7 and UCAS controls I/O8 - I/O15. The IC41C1665/IC41LV1665 CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IC41C1665 both BYTE READ and BYTE WRITE cycle capabilities. Memory Cycle A memory cycle is initiated by bringing RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensure proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOE are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. Refresh Cycle To retain data, 256 refresh cycles are required in each 4 ms period. There are two ways to refresh the memory: 1. By clocking each of the 256 row addresses (A0 through A7) with RAS at least once every 4 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the ad- dressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-before-RAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 8-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. |
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