RSS110N03

Transistor

2/3

Thermal resistance (Ta=25

°C)

°C / W

Rth (ch-a)

62.5

Parameter

Symbol

Limits

Unit

Channel to ambient

∗

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−−

10

Typ.

Max.

Unit

Conditions

Gate-source leakage

30

−−

Drain-source breakdown voltage

−−

10

Zero gate voltage drain current

1.0

−

2.5

V

Gate threshold voltage

−

Static drain-source on-starte

resistance

−

m

Ω

Forward transfer admittance

−

Input capacitance

−−

S

Output capacitance

−−

pF

Reverse transfer capacitance

−−

pF

Tum-on delay time

−−

pF

f=1MHz

Ω

Rise time

−−

ns

Tum-off delay time

−−

ns

Fall time

−−

ns

Total gate charge

−−

ns

−−

nC

−−

nC

−−

nC

∗Pulsed

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

7.6

10.4

10.3

14.3

11.2

15.5

8.0

1300

410

250

9

Ω

17

60

30

17

3.3

7.1

±11A

Body diode characteristics (Source-Drain Characteristics) (Ta=25

°C)

Forward voltage

−−

1.2

V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗

Electrical characteristic curves

0.01

0.1

1

10

100

10

1000

10000

100

Ta

=25°C

f

=1MHz

=0V

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

0.01

0.1

1

10

100

1

10

1000

10000

100

Ta

=25°C

=15V

=10V

Pulsed

Fig.2 Switching Characteristics

02468

10

12

14

16

18

TOTAL GATE CHARGE : Qg (nC)

0

1

2

3

4

5

6

7

8

Ta

=25°C

=15V

=11A

Pulsed

Fig.3 Dynamic Input Characteristics