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TPS816F Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPS816F Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TPS816(F) 2004-01-27 2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC 7 V Output voltage VOUT <= V CC V Output current (Ta = Topr) IOUT 16 mA LED output voltage VLED <= V CC V LED pulse forward current (Ta = Topr) ILED 70 mA Operating temperature Topr −30~85 °C Storage temperature Tstg −40~100 °C Soldering temperature (5s) (Note 1) Tsol 260 °C Note 1: Solder under the lead stopper. Electrical and Optical Characteristics (VCC = 5 V, Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage VCC ⎯ 4.5 5 5.5 V Supply current ICC VOUT, VLED left open ⎯ 4 7 mA High-level output voltage VOH E = 0 4.9 5 ⎯ V Output Low-level output voltage VOL IOL = 16 mA, E = 2 µW/nm 2 (Note 2) ⎯ 0.15 0.4 V Low-level output voltage VLED ILED = 70 mA (peak) 1.05 1.35 1.65 V Pulse cycle TC (Note 3) 64 130 220 µs Pulse width TW (Note 3) 4 8 13.7 µs LED output Duty ratio TW/TC ⎯ ⎯ 6 10 % Peak sensitivity wavelength λp ⎯ ⎯ 900 ⎯ nm H → L threshold radiant incidence EHL ⎯ 0.6 1.0 L → H threshold radiant incidence ELH No visible light (Note 2) ⎯ 0.4 0.8 µW/ mm 2 Hysteresis ELH/EHL ⎯ 0.45 0.65 0.8 ⎯ Propagation delay time (L → H) tpLH ⎯ 400 670 Propagation characteristics Propagation delay time (H → L) tpHL (Note 4) ⎯ 400 670 µs Permissible luminosity EX E = 2 µW/nm2 (Note 2, 5) 3000 ⎯ ⎯ lx Note 2: The signal light source is an infrared LED with λp = 940 mm. Note 3: The LED output waveform measurement circuit and waveform are as follows: 4 1 3 2 +5 V VLED VCC OUT GND TPS816(F) LEDOUT VLED GND +5 V TW TC |
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