WS7930D datasheet(1/6 Pages) WILLSEMI

Part #	WS7930D

Description	CMOS Low Band LTE LNA

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Manufacturer	WILLSEMI [Will Semiconductor Ltd.]

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WS7930D

Will Semiconductor Ltd.

1

Aug, 2016

– Rev. 1.2

WS7930D

CMOS Low Band LTE LNA

Descriptions

The WS7930D is a low noise amplifier (LNA) for LTE

receiver applications, available in a small 6-pin DFN

package. The WS7930D requires only one external

inductor for input matching.

The WS7930D is designed to achieve low power

dissipation and good performance. It is designed and

optimized for the LTE low band: 728MHz to 960MHz.

Features



Operating frequency: 728 MHz to 960 MHz



Noise figure = 0.8 dB



Gain = 14.0 dB



Input 1 dB compression point = 0 dBm



In-band input IP3 = 0 dBm



Supply voltage: 1.8 V to 3.1 V



Integrated supply decoupling capacitor



Supply current: 6.0 mA



Power-down mode leakage current < 3

μA



One external matching inductor required



ESD protection: HBM > 2.0kV for all pins



Integrated output matching



Package: 6-pin DFN, 1.1 x 0.7 x 0.55 mm3



Process: CMOS

Applications



Cell phones



Tablets



Other RF front-end modules

http//:www.sh-willsemi.com

DFN1107-6L (Bottom view)

Pin configuration (Top view)

B

= Device code

*

= Month code（A~Z）

Marking (Top view)

Order information

Device

Package

Shipping

WS7930D-6/TR

DFN1107-6L

10000/Reel&Tape

1

2

3

4

5

6

GND

VCC

RFOUT

GNDRF

RFIN

EN

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WS7930D Datasheet(PDF) 1 Page - Will Semiconductor Ltd.

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