Philips Semiconductors

BUK9528-55A; BUK9628-55A

TrenchMOS™ logic level FET

Product specification

Rev. 01 — 18 January 2001

8 of 15

9397 750 07683

© Philips Electronics N.V. 2001. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

03na81

0

20

40

60

80

100

012

3456

VGS (V)

ID

(A)

Tj = 175

oC

Tj = 25

oC

03na83

0

1

2

3

4

5

6

010

20

30

QG (nC)

VGS

(V)

VDD= 44 V

VDD= 14 V

03na82

0

20

40

60

80

100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD (V)

IS

(A)

Tj = 175

oC

Tj = 25

oC