BUK9628-55A datasheet(2/15 Pages) PHILIPS

Part #	BUK9628-55A

Description	TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK9528-55A; BUK9628-55A

TrenchMOS™ logic level FET

Product speciﬁcation

Rev. 01 — 18 January 2001

2 of 15

9397 750 07683

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

−

55

V

ID

drain current (DC)

Tmb =25 °C; VGS =5V

−

42

A

Ptot

total power dissipation

Tmb =25 °C

−

99

W

Tj

junction temperature

−

175

°C

RDSon

drain-source on-state resistance

VGS =5V; ID = 15 A; Tj =25 °C24

28

m

Ω

VGS = 4.5 V; ID = 15 A; Tj =25 °C

−

30

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

−

55

V

VDGR

drain-gate voltage (DC)

RGS =20kΩ−

55

V

VGS

gate-source voltage (DC)

−±10

V

VGSM

non-repetitive gate-source voltage

tp ≤ 50 µs

−±15

V

ID

drain current (DC)

Tmb =25 °C; VGS =5V;

Figure 2 and 3

−

42

A

Tmb = 100 °C; VGS =5V; Figure 2

−

30

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

−

168

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

−

99

W

Tstg

storage temperature

−55

+175

°C

Tj

operating junction temperature

−55

+175

°C

Source-drain diode

IDR

reverse drain current (DC)

Tmb =25 °C

−

42

A

IDRM

pulsed reverse drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs

−

168

A

Avalanche ruggedness

WDSS

non-repetitive avalanche energy

unclamped inductive load; ID =34A;

VDS ≤ 55 V; VGS =5V; RGS =50 Ω;

starting Tmb =25 °C

−

57.8

mJ

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