BUK9635-55A datasheet(4/9 Pages) PHILIPS

Part #	BUK9635-55A

Description	TrenchMOS transistor standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

 transistor

BUK9535-55A

Logic level FET

BUK9635-55A

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(VGS); conditions: ID = 25 A;

Fig.7. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(VGS); conditions: ID = 25 A;

Fig.8. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.9. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.10. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V

0

10

20

30

40

50

60

70

80

90

100

02468

10

VDS/V

ID/A

2.8

3.0

3.6

3.8

4.0

6.0

10.0

VGS/V =

2.6

3.4

3.2

2.4

4.4

4.8

5.0

5.5

6.5

7.0

7.5

0

10

20

30

40

50

60

70

01234567

VGS/V

ID/A

Tj/C= 175

oC

25

oC

0

10203040506070

20

25

30

35

40

ID/A

RDS(ON)/mOhm

VGS/V=

3.0

3.2

3.4

3.6

4.0

5.0

0

5

10

15

20

25

0

5

10

15

20

25

30

35

ID/A

gfs/S

3456789

10

22

23

24

25

26

27

28

29

30

31

32

33

ID/A

RDS(ON)/mOhm

0.5

1

1.5

2

2.5

3

-100

-50

0

50

100

150

200

Tmb / degC

a

Rds(on) normalised to 25degC

February 2000

4

Rev 1.000

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