Philips Semiconductors

BUK9728-55A

N-channel TrenchMOS™ logic level FET

Product data

Rev. 02 — 10 June 2004

2 of 12

9397 750 13326

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

5.

Quick reference data

6.

Limiting values

[1]

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

-

55

V

drain current (DC)

-

22

A

total power dissipation

-

26

W

junction temperature

-

150

°C

drain-source on-state resistance

23

28

m

Ω

-

30

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

-

55

V

drain-gate voltage (DC)

-55

V

gate-source voltage (DC)

-

±10

V

non-repetitive gate-source voltage

±15

V

drain current (DC)

Figure 2 and 3

-22

A

-16

A

peak drain current

Figure 3

[1]

-90

A

total power dissipation

-26

W

storage temperature

−55

+150

°C

operating junction temperature

−55

+150

°C

Source-drain diode

reverse drain current (DC)

-

22

A

peak reverse drain current

-

90

A

Avalanche ruggedness

energy

-

180

mJ