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BUK9728-55A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK9728-55A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors BUK9728-55A N-channel TrenchMOS™ logic level FET Product data Rev. 02 — 10 June 2004 2 of 12 9397 750 13326 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 5. Quick reference data 6. Limiting values [1] IDM is limited by chip, not package. Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) - 55 V ID drain current (DC) Tmb =25 °C; VGS =5V - 22 A Ptot total power dissipation Tmb =25 °C - 26 W Tj junction temperature - 150 °C RDSon drain-source on-state resistance Tj =25 °C; VGS =5V; ID = 15 A 23 28 m Ω Tj =25 °C; VGS = 4.5 V; ID =15A - 30 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - 55 V VDGR drain-gate voltage (DC) RGS =20kΩ -55 V VGS gate-source voltage (DC) - ±10 V VGSM non-repetitive gate-source voltage tp ≤ 50 µs- ±15 V ID drain current (DC) Tmb =25 °C; VGS =5V; Figure 2 and 3 -22 A Tmb = 100 °C; VGS =5V; Figure 2 -16 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 [1] -90 A Ptot total power dissipation Tmb =25 °C; Figure 1 -26 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IDR reverse drain current (DC) Tmb =25 °C - 22 A IDRM peak reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs - 90 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID =22A; VDS ≤ 55 V; VGS =5V; RGS =50 Ω; starting T j =25 °C - 180 mJ |
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