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BUK76150-55A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK76150-55A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page Philips Semiconductors BUK75/76150-55A TrenchMOS™ standard level FET Product data Rev. 02 — 25 November 2003 5 of 15 9397 750 12342 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 6. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C55 - - V Tj = −55 °C50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C2 3 4 V Tj = 175 °C1 - - V Tj = −55 °C - - 4.4 V IDSS drain-source leakage current VDS = 55 V; VGS =0V Tj =25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =5A; Figure 7 and 8 Tj =25 °C - 127 150 m Ω Tj = 175 °C - - 300 m Ω Dynamic characteristics Qg(tot) total gate charge VGS =10V; VDD =44V; ID =3A; Figure 14 - 5.5 - nC Qgs gate-source charge - 1 - nC Qgd gate-drain (Miller) charge - 2.7 - nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 - 242 322 pF Coss output capacitance - 40 48 pF Crss reverse transfer capacitance - 25 35 pF td(on) turn-on delay time VDD = 25 V; RL = 2.7 Ω; VGS =10V; RG = 5.6 Ω -3 -ns tr rise time - 26 - ns td(off) turn-off delay time - 8 - ns tf fall time - 10 - ns Ld internal drain inductance from drain lead 6 mm from package to center of die - 4.5 - nH from contact screw on mounting base to center of die SOT78 - 3.5 - nH from upper edge of drain mounting base to center of die SOT404 - 2.5 - nH Ls internal source inductance from source lead 6 mm from package to source bond pad - 7.5 - nH |
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