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BUK78150-55A Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK78150-55A Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page Philips Semiconductors BUK78150-55A TrenchMOS™ standard level FET Product specification Rev. 01 — 30 January 2001 8 of 13 9397 750 07738 © Philips Electronics N.V. 2001. All rights reserved. VDS =25V Tj =25 °C; ID =5A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 03nc22 0 2 4 6 8 10 02 46 8 10 VGS (V) ID (A) Tj = 150 OC Tj = 25 OC 03nb87 0 1 2 3 4 5 6 7 8 9 10 02 46 QG (nC) VGS (V) VDD= 44 V VDD= 14 V 03nc23 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 VSD (V) IS (A) Tj = 150 OCT j = 25 OC |
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