Philips Semiconductors

BUK78150-55A

TrenchMOS™ standard level FET

Product specification

Rev. 01 — 30 January 2001

8 of 13

9397 750 07738

© Philips Electronics N.V. 2001. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

03nc22

0

2

4

6

8

10

02

46

8

10

VGS (V)

ID

(A)

Tj = 150

Tj = 25

03nb87

0

1

2

3

4

5

6

7

8

9

10

02

46

QG (nC)

VGS

(V)

VDD= 44 V

VDD= 14 V

03nc23

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

VSD (V)

IS

(A)

Tj = 150

j = 25