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BUK95150-55A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK95150-55A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55A STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1 1.5 2.0 V T j = 175˚C 0.5 - - V T j = -55˚C - - 2.3 V I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 2 100 nA R DS(ON) Drain-source on-state V GS = 5 V; ID = 13 A - 125 150 m Ω resistance T j = 175˚C - - 300 m Ω V GS = 10 V; ID = 13 A - 116 137 m Ω V GS = 4.5 V; ID = 13 A - 124 161 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 254 339 pF C oss Output capacitance - 54 65 pF C rss Feedback capacitance - 42 58 pF t d on Turn-on delay time V DD = 30 V; Rload =1.2Ω;- 6 6 ns t r Turn-on rise time V GS = 5 V; RG = 10 Ω - 285 428 ns t d off Turn-off delay time - 1 1.4 ns t f Turn-off fall time - 18 25 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die(TO220AB) L d Internal drain inductance Measured from upper edge of drain - 2.5 - nH tab to centre of die(SOT404) L s Internal source inductance Measured from source lead to - 7.5 - nH source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 13 A current I DRM Pulsed reverse drain current - - 53 A V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V I F = 53 A; VGS = 0 V - 1.1 - V t rr Reverse recovery time I F = 53 A; -dIF/dt = 100 A/µs; - 24 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.026 - µC February 2000 2 Rev 1.000 |
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