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BUK95150-55A Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BUK95150-55A
Description  TrenchMOS transistor standard level FET
Download  9 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK95150-55A Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TrenchMOS
 transistor
BUK95150-55A
Logic level FET
BUK96150-55A
STATIC CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
-
V
voltage
T
j = -55˚C
50
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175˚C
0.5
-
-
V
T
j = -55˚C
-
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
µA
T
j = 175˚C
-
-
500
µA
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 13 A
-
125
150
m
resistance
T
j = 175˚C
-
-
300
m
V
GS = 10 V; ID = 13 A
-
116
137
m
V
GS = 4.5 V; ID = 13 A
-
124
161
m
DYNAMIC CHARACTERISTICS
T
mb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
254
339
pF
C
oss
Output capacitance
-
54
65
pF
C
rss
Feedback capacitance
-
42
58
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2Ω;-
6
6
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 Ω
-
285
428
ns
t
d off
Turn-off delay time
-
1
1.4
ns
t
f
Turn-off fall time
-
18
25
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
13
A
current
I
DRM
Pulsed reverse drain current
-
-
53
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 53 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 53 A; -dIF/dt = 100 A/µs;
-
24
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.026
-
µC
February 2000
2
Rev 1.000


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