F29C51004T70PI datasheet(5/16 Pages) ETC1

Part #	F29C51004T70PI

Description	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory

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SyncMOS

F29C51004T/F29C51004B

5

F29C51004T/F29C51004B V1.0 November 1998

AC Electrical Characteristics

(over all temperature ranges)

Read Cycle

Program (Erase/Program) Cycle

Parameter

Name

Parameter

-70

-90

-12

Unit

Min.

Max.

Min.

Max.

Min.

Max.

tRC

Read Cycle Time

70

—

90

—

120

—

ns

tAA

Address Access Time

—

70

—

90

—

120

ns

tACS

Chip Enable Access Time

—

70

—

90

—

120

ns

tOE

Output Enable Access Time

—

35

—

45

—

60

ns

tCLZ

CE Low to Output Active

0

—

0

—

0

—

ns

tOLZ

OE Low to Output Active

0

—

0

—

0

—

ns

tDF

OE or CE High to Output in High Z

0

30

0

40

0

50

ns

tOH

Output Hold from Address Change

0

—

0

—

0

—

ns

Parameter

Name

Parameter

-70

-90

-12

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

tWC

Write Cycle Time

70

—

90

—

120

—

ns

tAS

Address Setup Time

0

—

0

—

0

—

ns

tAH

Address Hold Time

45

—

45

—

50

—

ns

tCS

CE Setup Time

0

—

0

—

0

—

ns

tCH

CE Hold Time

0

—

0

—

0

—

ns

tOES

OE Setup Time

0

—

0

—

0

—

ns

tOEH

OE High Hold Time

0

—

0

—

0

—

ns

tWP

WE Pulse Width

35

—

45

—

50

—

ns

tWPH

WE Pulse Width High

20

—

30

—

35

—

ns

tDS

Data Setup Time

30

—

30

—

30

—

ns

tDH

Data Hold Time

0

—

0

—

0

—

ns

tWHWH1

Programming Cycle

—

20

—

20

—

20

µs

tWHWH2

Sector Erase Cycle

—

10

—

10

—

10

ms

tWHWH3

Chip Erase Cycle

—

2

—

2

—

2

—

sec

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