4
F29C51004T/F29C51004B V1.0 November 1998
SyncMOS
F29C51004T/F29C51004B
Absolute Maximum Ratings(1)
NOTE:
1.
Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.
No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Industrial
Unit
VIN
Input Voltage (input or I/O pins)
-2 to +7
-2 to +7
V
VIN
Input Voltage (A9 pin, OE)
-2 to +13
-2 to +13
V
VCC
Power Supply Voltage
-0.5 to +5.5
-0.5 to +5.5
V
TSTG
Storage Temerpature (Plastic)
-65 to +125
-65 to +150
°C
TOPR
Operating Temperature
0 to +70
-40 to + 85
°C
IOUT
Short Circuit Current(2)
200 (Max.)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
VIL
Input LOW Voltage
VCC = VCC Min.
—
0.8
V
VIH
Input HIGH Voltage
VCC = VCC Max.
2
—
V
IIL
Input Leakage Current
VIN = GND to VCC, VCC = VCC Max.
—
±1
µA
IOL
Output Leakage Current
VOUT = GND to VCC, VCC = VCC Max.
—
±10
µA
VOL
Output LOW Voltage
VCC = VCC Min., IOL = 2.1mA
—
0.4
V
VOH
Output HIGH Voltage
VCC = VCC Min, IOH = -400µA
2.4
—
V
ICC1
Read Current
CE = OE = VIL, WE = VIH, all I/Os open,
Address input = VIL/VIH, at f = 1/tRC Min.,
VCC = VCC Max.
—
30
mA
ICC2
Write Current
CE = WE = VIL, OE = VIH, VCC = VCC Max.
—
40
mA
ISB
TTL Standby Current
CE = OE = WE = VIH, VCC = VCC Max.
—
1
mA
ISB1
CMOS Standby Current
CE = OE = WE = VCC – 0.3V, VCC = VCC Max.
—
50
µA
VH
Device ID Voltage for A9
CE = OE = VIL, WE = VIH
11.5
12.5
V
IH
Device ID Current for A9
CE = OE = VIL, WE = VIH, A9 = VH Max.
—
50
µA