SyncMOS
1
F29C51004T/F29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
F29C51004T/F29C51004B V1.0 November 1998
Features
s 512Kx8-bit Organization
s Address Access Time: 70, 90, 120 ns
s Single 5V
± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20
µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 50
µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
– F29C51004T (Top Boot Block)
– F29C51004B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The F29C51004T/F29C51004B is a high speed
524,288 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The F29C51004T/F29C51004B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
TheF29C51004T/F29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (F29C51004T) or the bottom (F29C51004B).
All inputs and outputs are CMOS and TTL
compatible.
The F29C51004T/F29C51004B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Temperature
Mark
P
T
J
70
90
120
0
°C to 70 °C
••••••
Blank
–40
°C to +85°C
•••
•
I
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