MRF6S23100HSR3 datasheet(7/12 Pages) FREESCALE

Part #	MRF6S23100HSR3

Description	RF Power Dield Effect Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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MRF6S23100HR3 MRF6S23100HSR3

7

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

210

109

90

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. MTTF Factor versus Junction Temperature

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

108

107

106

120

140

160

180 190

100

110

130

150

170

200

W-CDMA TEST SIGNAL

10

0.0001

100

0

PEAK−TO−AVERAGE (dB)

Figure 13. CCDF W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single-Carrier Test Signal

10

1

0.1

0.01

0.001

24

68

Figure 14. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

3.84 MHz

Channel BW

−IM3 @

3.84 MHz BW

+IM3 @

3.84 MHz BW

−ACPR @

3.84 MHz BW

+ACPR @

3.84 MHz BW

+20

+30

0

−10

−40

−50

−60

−70

−80

−20

20

515

10

0

−5

−10

−15

−20

−25

25

−30

W−CDMA. ACPR Measured in 3.84 MHz Channel

Bandwidth @ +5 MHz Offset. IM3 Measured in

3.84 MHz Bandwidth @ +10 MHz Offset. PAR =

8.5 dB @ 0.01% Probability on CCDF

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MRF6S23100HSR3 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

MRF6S23100HSR3 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc

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