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MRF6S23100HSR3 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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MRF6S23100HSR3 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 12 page MRF6S23100HR3 MRF6S23100HSR3 7 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 210 109 90 TJ, JUNCTION TEMPERATURE (°C) Figure 12. MTTF Factor versus Junction Temperature This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 108 107 106 120 140 160 180 190 100 110 130 150 170 200 W-CDMA TEST SIGNAL 10 0.0001 100 0 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal 10 1 0.1 0.01 0.001 24 68 Figure 14. 2-Carrier W-CDMA Spectrum f, FREQUENCY (MHz) 3.84 MHz Channel BW −IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW −ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW +20 +30 0 −10 −40 −50 −60 −70 −80 −20 20 515 10 0 −5 −10 −15 −20 −25 25 −30 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF |
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