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K6R4008V1D-UC10 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K6R4008V1D-UC10 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 12 page K6R4016C1D CMOS SRAM PRELIMPreliminaryPPPPPPPPPINARY Rev 2.0 - 5 - June 2003 RECOMMENDED DC OPERATING CONDITIONS* (TA=0 to 70 °C) * The above parameters are also guaranteed at industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. *** VIH(Max) = V CC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA. Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.2 - VCC+0.5*** V Input Low Voltage VIL -0.5** - 0.8 V CAPACITANCE*(TA=25 °C, f=1.0MHz) * Capacitance is sampled and not 100% tested. Item Symbol Test Conditions TYP Max Unit Input/Output Capacitance CI/O VI/O=0V - 8 pF Input Capacitance CIN VIN=0V - 6 pF DC AND OPERATING CHARACTERISTICS*(TA=0 to 70 °C, Vcc=5.0V±10%, unless otherwise specified) * The above parameters are also guaranteed at industrial temperature range. Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI VIN=VSS to VCC -2 2 µA Output Leakage Current ILO CS =VIH or OE=VIH or WE=V IL VOUT=VSS to VCC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS =VIL, VIN=V IH or VIL, IOUT=0mA Com. 10ns - 65 mA Ind. 10ns - 75 Standby Current ISB Min. Cycle, CS=V IH - 20 mA ISB1 f=0MHz, CS ≥V CC-0.2V, VIN ≥VCC-0.2V or VIN≤0.2V - 5 Output Low Voltage Level VOL IOL=8mA - 0.4 V Output High Voltage Level VOH IOH=-4mA 2.4 - V |
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