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K4S64323LH-HC75 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K4S64323LH-HC75 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 12 page K4S64323LH - F(H)E/N/G/C/L/F February 2004 Mobile-SDRAM DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85 °C for Extended, -25 to 70°C for Commercial) NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Internal TCSR can be supported. In commercial Temp : Max 40 °C/Max 70°C, In extended Temp : Max 40°C/Max 85°C 4. K4S64323LH-F(H)E/C** 5. K4S64323LH-F(H)N/L** 6. K4S64323LH-F(H)S/R** 7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ). Parameter Symbol Test Condition Version Unit Note -60 -75 -1H -1L Operating Current (One Bank Active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 75 70 70 65 mA 1 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 0.5 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 0.5 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 10 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 7 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 5 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 5 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 20 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 20 mA Operating Current (Burst Mode) ICC4 IO = 0 mA Page burst 4Banks Activated tCCD = 2CLKs 90 85 70 70 mA 1 Refresh Current ICC5 tRC ≥ tRC(min) 120 115 110 100 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V -E/C 1000 uA 4 -N/L 300 5 -G/F Internal TCSR Max 40 Max 85/70 °C 3 Full Array 160 300 uA 6 1/2 of Full Array 140 240 1/4 of Full Array 120 220 |
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Similar Description - K4S64323LH-HC75 |
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