K4S64323LH - F(H)E/N/G/C/L/F

February 2004

Mobile-SDRAM

DC CHARACTERISTICS

°C for Extended, -25 to 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In commercial Temp : Max 40

°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C

4. K4S64323LH-F(H)E/C**

5. K4S64323LH-F(H)N/L**

6. K4S64323LH-F(H)S/R**

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-60

-75

-1H

-1L

Operating Current

(One Bank Active)

Burst length = 1

75

70

70

65

mA

1

Precharge Standby Current

in power-down mode

CKE

0.5

mA

0.5

Precharge Standby Current

in non power-down mode

CKE

Input signals are changed one time during

20ns

10

mA

CKE

Input signals are stable

7

Active Standby Current

in power-down mode

CKE

5

mA

5

Active Standby Current

in non power-down mode

(One Bank Active)

CKE

Input signals are changed one time during

20ns

20

mA

CKE

Input signals are stable

20

mA

Operating Current

(Burst Mode)

Page burst

4Banks Activated

90

85

70

70

mA

1

Refresh Current

120

115

110

100

mA

2

Self Refresh Current

CKE

≤ 0.2V

-E/C

1000

uA

4

-N/L

300

5

-G/F

Internal TCSR

Max 40

Max 85/70

°C

3

Full Array

160

300

uA

6

1/2 of Full Array

140

240

1/4 of Full Array

120

220