KM23V32005BG

CMOS MASK ROM

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

The KM23V32005BG is a fully static mask programmable ROM

fabricated using silicon gate CMOS process technology, and is

organized

either

as

4,194,304x8

bit(byte

mode)

or

as

2,097,152x16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device includes page read mode function, page read mode

allows 8 words(or 16 bytes) of data to read fast in the same

This device operates with a 3.3V power supply, and all inputs

and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The KM23V32005BG is packaged in a 44-SOP.

GENERAL DESCRIPTION

FEATURES

• Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

• Fast access time

Random Access Time : 100ns(Max.)

Page Access Time

: 30ns(Max.)

• 8 words / 16 bytes page access

• Supply voltage : single +3.3V

• Current consumption

Operating : 60mA(Max.)

Standby

: 30

µA(Max.)

• Fully static operation

• All inputs and outputs TTL compatible

• Three state outputs

• Package

KM23V32005BG : 44-SOP-600

X

AND

DECODER

BUFFERS

Y

AND

DECODER

BUFFERS

MEMORY CELL

SENSE AMP.

CONTROL

LOGIC

MATRIX

(2,097,152x16/

4,194,304x8)

DATA OUT

BUFFERS

CE

OE

BHE

.

.

.

.

.

.

.

.

. . .

PIN CONFIGURATION

N.C

CE

OE

SOP

KM23V32005BG

FUNCTIONAL BLOCK DIAGRAM

1

2

44

43

3

4

42

41

5

6

40

39

7

8

38

37

9

10

36

35

11

12

34

33

13

14

32

31

15

16

30

29

17

18

28

27

19

20

26

25

21

22

24

23

BHE

Pin Name

Pin Function

Page Address Inputs

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

BHE

Word/Byte selection

CE

Chip Enable

OE

Output Enable

Power (3.3V)

Ground

N.C

No Connection