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M470L3324BT Datasheet(PDF) 11 Page - Samsung semiconductor |
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M470L3324BT Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 20 page DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 2,080 1,400 1,280 1,280 mA IDD1 2,240 1,600 1,480 1,480 mA IDD2P 808080 80 mA IDD2F 480 480 480 480 mA IDD2Q 400 400 400 400 mA IDD3P 560 480 480 480 mA IDD3N 1,520 800 800 800 mA IDD4R 2,360 1,840 1,600 1,600 mA IDD4W 2,680 1,880 1,640 1,640 mA IDD5 2,880 2,400 2,320 2,320 mA IDD6 Normal 808080 80 mA Low power 48 48 48 48 mA Optional IDD7A 4,200 3,520 3,120 3,120 mA 9.3 M470L2923BV0 [ (128M x 64) 1GB Module ] |
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