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M470L6524BT0-CB3 Datasheet(PDF) 9 Page - Samsung semiconductor |
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M470L6524BT0-CB3 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 20 page DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN,VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD,VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 °C Power dissipation PD 1.5 * # of component W Short circuit current IOS 50 mA Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70 °C) Note : 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0. Parameter Symbol Min Max Unit Note Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDD 2.3 2.7 V Supply voltage(for device with a nominal VDD of 2.6V for DDR400) VDD 2.5 2.7 V I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDDQ 2.3 2.7 V I/O Supply voltage(for device with a nominal VDD of 2.6V for DDR400) VDDQ 2.5 2.7 V I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1 I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V2 Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V Input logic low voltage VIL(DC) -0.3 VREF-0.15 V Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3 V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4 Input leakage current II -2 2 uA Output leakage current IOZ -5 5 uA Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9mA 8.0 DC Operating Conditions 7.0 Absolute Maximum Ratings |
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