M470L6524BT0-CB3 datasheet(11/20 Pages) SAMSUNG

Part #	M470L6524BT0-CB3

Description	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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DDR SDRAM

256MB, 512MB, 1GB Unbuffered SODIMM

Rev. 1.5 June 2005

(VDD=2.7V, T = 10°C)

* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.

Symbol

CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)

Unit

Notes

IDD0

2,080

1,400

1,280

mA

IDD1

2,240

1,600

1,480

mA

IDD2P

808080

80

mA

IDD2F

480

mA

IDD2Q

400

mA

IDD3P

560

480

mA

IDD3N

1,520

800

mA

IDD4R

2,360

1,840

1,600

mA

IDD4W

2,680

1,880

1,640

mA

IDD5

2,880

2,400

2,320

mA

IDD6

Normal

808080

80

mA

Low power

48

mA

Optional

IDD7A

4,200

3,520

3,120

mA

9.3 M470L2923BV0 [ (128M x 64) 1GB Module ]

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M470L6524BT0-CB3 Datasheet(PDF) 11 Page - Samsung semiconductor

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