KM68V1000BL datasheet(8/10 Pages) SAMSUNG

Part #	KM68V1000BL

Description	128K X 8bit Low Power and Low Voltage CMOS Statinc RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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KM68V1000B, KM68U1000B Family

CMOS SRAM

Revision 2.0

March 1998

DATA RETENTION WAVE FORM

CS1 controlled

VCC

3.0/2.7V1)

2.2V

VDR

CS1

GND

Data Retention Mode

CS1

≥VCC - 0.2V

tSDR

tRDR

TIMING WAVEFORM OF WRITE CYCLE(3) (CS1 Controlled)

Address

CS1

tAW

NOTES (WRITE CYCLE)

1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,

CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,

tWP is measured from the begining of write to the end of write.

2. tCW is measured from the CS1 going low or CS2 going high to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR(1) applied in case a write ends as CS1 or WE going high tWR(2)

applied in case a write ends as CS2 going to low.

CS2

tCW(2)

WE

Data in

Data Valid

Data out

High-Z

tCW(2)

tWR(4)

tWP(1)

tDW

tDH

tAS(3)

tWC

CS2 controlled

VCC

3.0/2.7V1)

0.4V

VDR

CS2

GND

Data Retention Mode

tSDR

tRDR

1. 3.0V for KM68V1000B Family , 2.7V for KM68U1000B Family

CS2

≤0.2V

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