NL17SZ00DFT2 datasheet(3/6 Pages) ONSEMI

Part #	NL17SZ00DFT2

Description	Single 2-Input NAND Gate

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Manufacturer	ONSEMI [ON Semiconductor]

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NL17SZ00

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DC ELECTRICAL CHARACTERISTICS

VCC

TA = 255C

*405C v TA v 855C

Symbol

Parameter

Condition

VCC

(V)

Min

Typ

Max

Min

Max

Unit

VIH

High−Level Input Voltage

1.65 to 1.95

2.3 to 5.5

0.75 VCC

0.7 VCC

0.75 VCC

0.7 VCC

V

VIL

Low−Level Input Voltage

1.65 to 1.95

2.3 to 5.5

0.25 VCC

0.3 VCC

0.25 VCC

0.3 VCC

V

VOH

High−Level Output Voltage

VIN = VIL or VIH

IOH = 100 mA

IOH = −3 mA

IOH = −8 mA

IOH = −12 mA

IOH = −16 mA

IOH = −24 mA

IOH = −32 mA

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

VCC − 0.1

1.55

1.9

2.2

2.4

2.3

3.8

VCC

1.65

2.1

2.4

2.7

2.5

4.0

VCC − 0.1

1.55

1.9

2.2

2.4

2.3

3.8

V

VOL

Low−Level Output Voltage

VIN = VIH or VOH

IOL = 100 mA

IOL = 3 mA

IOL = 8 mA

IOL = 12 mA

IOL = 16 mA

IOL = 24 mA

IOL = 32 mA

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

0.08

0.20

0.22

0.28

0.38

0.42

0.1

0.24

0.3

0.4

0.55

0.1

0.24

0.3

0.4

0.55

V

IIN

Input Leakage Current

VIN = VCC or GND

0 to 5.5

$0.1

$1.0

mA

ICC

Quiescent Supply Current

VIN = VCC or GND

5.5

1

10

mA

AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns

VCC

TA = 255C

*405C v TA v 855C

Symbol

Parameter

Condition

VCC

(V)

Min

Typ

Max

Min

Max

Unit

tPLH

Propagation Delay

(Fi

d )

RL = 1 MW, CL = 15 pF

1.65

2.0

5.4

11.4

2.0

12

ns

tPHL

(Figure 3 and 4)

RL = 1 MW, CL = 15 pF

1.8

2.0

4.5

9.5

2.0

10.0

RL = 1 MW, CL = 15 pF

2.5 to 0.2

0.8

3.0

6.5

0.8

7.0

RL = 1 MW, CL = 15 pF

3.3

$ 0.3

0.5

2.4

4.5

0.5

4.7

RL = 500 W, CL = 50 pF

1.5

2.4

5.0

1.5

5.2

RL = 1 MW, CL = 15 pF

5.0

$ 0.5

0.5

2.0

3.9

0.5

4.1

RL = 500 W, CL = 50 pF

0.8

2.4

4.3

0.8

4.5

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

Input Capacitance

VCC = 5.5 V, VI = 0 V or VCC

u4

pF

CPD

Power Dissipation Capacitance

(N

)

10 MHz, VCC = 3.3 V, VI = 0 V or VCC

25

pF

(Note 5)

10 MHz, VCC = 5.5 V, VI = 0 V or VCC

30

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic

power consumption; PD = CPD VCC2 fin + ICC VCC.

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