© Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 2

1

Publication Order Number:

MGSF1P02ELT1/D

MGSF1P02ELT1

Preferred Device

Power MOSFET

750 mAmps, 20 Volts

P–Channel SOT–23

These miniature surface mount MOSFETs low RDS(on) assure

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are dc–dc converters and power management in portable

and battery–powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Gate–to–Source Voltage – Continuous

VGS

± 8.0

Vdc

Drain Current

– Continuous @ TA = 25°C

– Pulsed Drain Current (tp ≤ 10 µs)

ID

IDM

750

2000

mA

Total Power Dissipation @ TA = 25°C

PD

400

mW

Operating and Storage Temperature

Range

TJ, Tstg

– 55 to

150

°C

Thermal Resistance – Junction–to–Ambient

R

θJA

300

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10

seconds

TL

260

°C

3

1

2

Device

Package

Shipping

ORDERING INFORMATION

MGSF1P02ELT1

SOT–23

3000 Tape & Reel

P–Channel

SOT–23

CASE 318

STYLE 21

http://onsemi.com

W

MARKING

DIAGRAM

PE

W

= Work Week

PIN ASSIGNMENT

3

2

1

Drain

Gate

2

1

3

Source

750 mAMPS

20 VOLTS

RDS(on) = 260 mW

Preferred devices are recommended choices for future use

and best overall value.

MGSF1P02ELT3

SOT–23

10,000 Tape & Reel