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5962G9689103QYX Datasheet(PDF) 1 Page - Aeroflex Circuit Technology |
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5962G9689103QYX Datasheet(HTML) 1 Page - Aeroflex Circuit Technology |
1 / 11 page 1 Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiation- hardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz • Derating: 3mA/MHz - Standby: 2mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LET TH(0.25) ~ 100 MeV-cm 2/mg - SEL Immune >128 MeV-cm 2/mg - Saturated Cross Section cm 2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion - Memory cell LET threshold: >128 MeV-cm 2/mg q QML Q & V compliant part - AC and DC testing at factory q Packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory q V DD: 5.0 volts + 10% q Standard Microcircuit Drawing 5962-96891 PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments. DECODER MEMORY ARRAY SENSE AMPLIFIER PROGRAMMING CONTROL LOGIC DQ(7:0) A(14:0) CE PE OE Figure 1. PROM Block Diagram |
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