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5962H9689103QYX Datasheet(PDF) 3 Page - Aeroflex Circuit Technology |
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5962H9689103QYX Datasheet(HTML) 3 Page - Aeroflex Circuit Technology |
3 / 11 page 3 RECOMMENDED OPERATING CONDITIONS DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)* (V DD = 5.0V ±10%; -55°C < TC < +125 °C) Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019 at 1E6 rad(Si). 1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance. 2. Supplied as a design limit but not guaranteed or tested. 3. Not more than one output may be shorted at a time for maximum duration of one second. 4. Functional test. 5. Derates at 3.0mA/MHz. SYMBOL PARAMETER LIMITS UNITS VDD Positive supply voltage 4.5 to 5.5 V T C Case temperature range -55 to +125 °C VIN DC input voltage 0 to VDD V SYMBOL PARAMETER CONDITION MINIMUM MAXIMUM UNIT VIH High-level input voltage (TTL) 2.4 V V IL Low-level input voltage (TTL) 0.8 V VOL1 Low-level output voltage IOL = 4.0mA, VDD = 4.5V (TTL) 0.4 V VOL2 Low-level output voltage IOL = 200µA, VDD = 4.5V (CMOS) VSS + 0.10 V V OH1 High-level output voltage I OH = -200µA, VDD = 4.5V (CMOS) V DD -0.1 V VOH2 High-level output voltage IOH = -2.0mA, VDD = 4.5V (TTL) 2.4 V CIN 1 Input capacitance ƒ = 1MHz, V DD = 5.0V V IN = 0V 15 pF CIO 1, 4 Bidirectional I/O capacitance ƒ = 1MHz, V DD = 5.0V VOUT = 0V 15 pF IIN Input leakage current VIN = 0V to VDD -5 5 µA I OZ Three-state output leakage current V O = 0V to V DD VDD = 5.5V OE = 5.5V -10 10 µA IOS 2,3 Short-circuit output current VDD = 5.5V, VO = VDD V DD = 5.5V, VO = 0V -90 90 mA mA IDD1(OP) 5 Supply current operating @25.0MHz (40ns product) @22.2MHz (45ns product) TTL inputs levels (IOUT = 0), VIL = 0.2V VDD, PE = 5.5V 125 117 mA mA IDD2(SB) post-rad Supply current standby CMOS input levels VIL = VSS +0.25V CE = V DD - 0.25 VIH = VDD - 0.25V 2 mA |
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