MNDS26F32M-X-RH REV 0C0

MICROCIRCUIT DATA SHEET

Electrical Characteristics

DC PARAMETERS - DRIFT VALUES

(The following conditions apply to all the following parameters, unless otherwise specified.)

DC:

NOTE::This section applies to -QMLV devices only and shall be read & recorded at TA = +25C before and

after each burn-in and shall not change by more than the limits indicated.

The delta rejects shall be

included in the PDA calculation.

SYMBOL

PARAMETER

CONDITIONS

NOTES

PIN-

NAME

MIN

MAX

UNIT

SUB-

GROUPS

Voh

Logical "1"

Output Voltage

Vcc = 4.5V, Ioh = -440uA,

Delta Vin = 1V, Ven

= 0.8V

= Ven

-250

250

mV

1

Vol

Logical "0"

Output Voltage

Vcc = 4.5V, Iol = 4mA,

Delta Vin = -1V, Ven

=

0.8V = Ven

-45

45

mV

1

Vcc = 4.5V, Iol = 8mA,

Delta Vin = -1V, Ven = 0.8V = Ven

-45

45

mV

1

Iin

Input Current

Vcc = 4.5V, Vin=15V (Pin under test),

other inputs -15V <= Vin <= +15V

-0.28

0.28

mA

1

Vcc = 5.5V, Vin=-15V (Pin under test),

other inputs -15V <= Vin <= +15V

-0.28

0.28

mA

1

Note 1:

Power dissipation must be externally controlled at elevated temperatures.

Note 2:

Parameter tested go-no-go only.

Note 3:

Tested at 50pF guarantees limit at 15 & 5pF.

Note 4:

Tested at 50pF, system capacitance exceeds 5 to 15pF.

Note 5:

Pre and post irradiation limits are identical to those listed under AC and DC

electrical characteristics. These parts may be dose rate sensitive in a space

environment and demonstrate enhanced low dose rate effect. Radiaton end point limits

for the noted parameters are guaranteed only for the conditions as specified in

MIL-STD-883, Method 1019.5, Condition A.

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