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PHM8001 Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PHM8001 Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
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1 / 4 page  MOSFET MODULE Single 800A /150V Single 800A /150V Single 800A /150V Single 800A /150V PHM8001 PHM8001 PHM8001 PHM8001 MAXMUM RATINGS Ratings Symbol PHM8001 Unit Drain-Source Voltage (VGS=0V) VDSS 150 V Gate -Source Voltage VGSS +/ - 20 V Duty=50% 800 (Tc=25 °C) Continuous Drain Current D.C. ID 640 (Tc=25 °C) A Pulsed Drain Current IDM 1,600 Tc=25 °C) A Total PowerDissipation PD 2,650 Tc=25 °C) W OperatingJunction Temperature Range Tjw -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) VISO 2,500 V Module Base to Heatsink 3.0 Gate Terminals M4 1.4 MountingTorque Bus Bar to Main Terminals FTOR M8 10.5 N •m ELECTRICAL CHARACTERISTICS (@Tc=25°Cunlessotherwisenoted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Zero Gate Voltage Drain Current IDSS VDS=VDSS,VGS=0V - - 4.8 mA Gate-Source Leakage Current IGSS VGS=+/- 20V,VDS=0V - - 4.8 µA Gate-Source ThresholdVoltage VGS(th) VDS=VGS, ID=16mA 1.0 2.0 3.2 V StaticDrain-Source On-Resistance rDS(on) VGS=10V, ID=800A - 1.15 1.4 m-ohm Drain-Source On-Voltage VDS(on) VGS=10V, ID=800A - 1.10 1.25 V ForwardTransconductance gfs VDS=15V, ID=800A - - - S InputCapacitance Cies - 165 - nF OutputCapacitance Coss - 20 - nF Reverse TransferCapacitance Crss VDS=10V,VGS=0V,f=1MHz - 20 - nF Rise Time tr - 500 - Turn-On DelayTime td(on) - 880 - Fall Time tf - 180 - Turn-Off Delay Time td(off) VDD=80V ID=400A VGS=-5V, +10V RG=0.75 ohm - 1,300 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Duty=50%. - - 800 Continuous Source Current IS D.C. (Terminal Temperature=80 °C 650 A PulsedSource Current ISM - - - 1,600 A Diode ForwardVoltage VSD IS=800A - 1.10 1.76 V Reverse RecoveryTime trr IS=800A, -dis/dt=1,600A/ µs - 130 - ns THERMAL CHRACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit Thermal Resistance, Junction to Case Rth(j-c) - - 0.047 Thermal Resistance, Case to Heatsink Rth(c-f) Mountingsurface flat, smooth, and greased - - 0.035 °C/W FEATURES * TrenchGate MOSFETModule * SuperLowRds(ON) 1.4 milliohms( @800A) * With FastRecoverySource-Drain Diode TYPICAL APPLICATIONS * ChopperControl ForFORKLIFTs Approximate Weight:650g OUTLINE DRAWING Circuit |
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Similar Description - PHM8001 |
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