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2N3773 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N3773 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N3773 2N6609 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (1) *Collector–Emitter Breakdown Voltage (IC = 0.2 Adc, IB = 0) VCEO(sus) 140 — Vdc *Collector–Emitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) VCEX(sus) 160 — Vdc Collector–Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) VCER(sus) 150 — Vdc *Collector Cutoff Current (VCE = 120 Vdc, IB = 0) ICEO — 10 mAdc *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX — — 2 10 mAdc Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO — 2 mAdc *Emitter Cutoff Current (VBE = 7 Vdc, IC = 0) IEBO — 5 mAdc ON CHARACTERISTICS (1) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE 15 5 60 — — Collector–Emitter Saturation Voltage *(IC = 8 Adc, IB = 800 mAdc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) — — 1.4 4 Vdc *Base–Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VBE(on) — 2.2 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common–Emitter Small–Signal, Short–Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) |hfe| 4 — — *Small–Signal Current Gain (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 40 — — SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (non–repetitive), VCE = 100 V, See Figure 12 IS/b 1.5 — Adc (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. * Indicates JEDEC Registered Data. |
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