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ABB Semiconductors AG reserves the right to change specifications without notice.
VDSM
=
6500 V
ITAVM
=
350 A
ITRMS
=
550 A
ITSM
=
4500 A
VT0
=1.20 V
rT
=
2.300 mΩ
Ω
Ω
Ω
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Sep. 01
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate
Blocking
Part Number
5STP 03X6500 5STP 03X6200 5STP 03X5800 Conditions
VDSM
VRSM
6500 V
6200 V
5800 V
f = 5 Hz, tp = 10ms
VDRM
VRRM
5600 V
5300 V
4900 V
f = 50 Hz, tp = 10ms
VRSM1
7000 V
6700 V
6300 V
tp = 5ms, single pulse
IDSM
≤ 150 mA
VDSM
IRSM
≤ 150 mA
VRSM
Tj = 125°C
dV/dtcrit
1000 V/µs
Exp. to 0.67 x VDRM, Tj = 125°C
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
FM
Mounting force
nom.
10 kN
min.
8 kN
max.
12 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight
0.4 kg
DS
Surface creepage distance
38 mm
Da
Air strike distance
21 mm