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DS90C363B Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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DS90C363B Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 12 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.3V to +4V CMOS/TTL Input Voltage −0.3V to (V CC + 0.3V) LVDS Driver Output Voltage −0.3V to (V CC + 0.3V) LVDS Output Short Circuit Duration Continuous Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Lead Temperature (Soldering, 4 sec) +260˚C Maximum Package Power Dissipation Capacity @ 25˚C MTD48 (TSSOP) Package: DS90C363B 1.98 W Package Derating: DS90C363B 16 mW/˚C above +25˚C ESD Rating (HBM, 1.5 k Ω, 100 pF) 7 kV (EIAJ, 0 Ω, 200 pF) 500V Recommended Operating Conditions Min Nom Max Units Supply Voltage (V CC) 3.0 3.3 3.6 V Operating Free Air Temperature (T A) −10 +25 +70 ˚C Supply Noise Voltage (V CC) 200 mV PP TxCLKIN frequency 18 68 MHz Electrical Characteristics Over recommended operating supply and temperature ranges unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units CMOS/TTL DC SPECIFICATIONS V IH High Level Input Voltage 2.0 V CC V V IL Low Level Input Voltage GND 0.8 V V CL Input Clamp Voltage I CL = −18 mA −0.79 −1.5 V I IN Input Current V IN = 0.4V, 2.5V or VCC +1.8 +10 µA V IN = GND −10 0 µA LVDS DC SPECIFICATIONS V OD Differential Output Voltage R L = 100 Ω 250 345 450 mV ∆V OD Change in V OD between complimentary output states 35 mV V OS Offset Voltage (Note 4) 1.13 1.25 1.38 V ∆V OS Change in V OS between complimentary output states 35 mV I OS Output Short Circuit Current V OUT = 0V, RL = 100 Ω −3.5 −5 mA I OZ Output TRI-STATE® Current Power Down = 0V, V OUT =0VorV CC ±1 ±10 µA TRANSMITTER SUPPLY CURRENT ICCTW Transmitter Supply Current Worst Case R L = 100 Ω, C L = 5 pF, Worst Case Pattern (Figures 1, 4 ) " Typ " values are given for V CC = 3.6V and T A = +25˚C, " Max " values are given for V CC = 3.6V and T A = −10˚C f = 25MHz 29 40 mA f = 40 MHz 34 45 mA f = 65 MHz 42 55 mA www.national.com 2 |
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